MJD32CG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD32CG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW7694450
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK PNP 100V 3A
Documentation

Datasheet

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MJD32CG Specifications

Attribute	Attribute Value

Part Number	MJD32CG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW7694450
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	3 MHz
Voltage Rating (DC)	-100 V
Current Rating	-3.00 A
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	15 W
Gain Bandwidth Product	3 MHz
Breakdown Voltage (Collector to Emitter)	100 V
Thermal Resistance	8.3℃/W (RθJC)
Continuous Collector Current	3A
hFE Min	10 @3A, 4V
Input Power (Max)	1.56 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1560 mW
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The MJD32CG is a 3A PNP bipolar Power Transistor designed for general purpose amplifier and low speed switching applications.
Electrically similar to popular TIP31 and TIP32 series
AEC-Q101 qualified and PPAP capable

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