MJD32CTF - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD32CTF
Manufacturer

ON Semiconductor
ChipWorker Part#

CW44479096
Category

BJT Transistor, BJT
Package

TO-252-3
Description

TRANS PNP 100V 3A DPAK
Documentation

Datasheet

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MJD32CTF Specifications

Attribute	Attribute Value

Part Number	MJD32CTF
Manufacturer	ON Semiconductor
ChipWorker Part#	CW44479096
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	3 MHz
Number of Positions	3 Position
Power Dissipation	1.56 W
Breakdown Voltage (Collector to Emitter)	100 V
hFE Min	10 @3A, 4V
Input Power (Max)	1.56 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1560 mW
	expand all
Size-Length	6.6 mm
Size-Width	6.1 mm
Size-Height	2.3 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status
ECCN Code	EAR99

Product Description

The MJD32CTF is a PNP Epitaxial Silicon Transistor designed for general-purpose amplifier and low-speed switching applications.
Lead formed for surface-mount application
Electrically similar to popular TIP31 and TIP31C

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