MJD45H11G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD45H11G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW860544
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK PNP 80V 8A
Documentation

Datasheet

MJD45H11G Global Supplier

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MJD45H11G Specifications

Attribute	Attribute Value

Part Number	MJD45H11G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW860544
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	90 MHz
Voltage Rating (DC)	-80.0 V
Current Rating	-8.00 A
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	20 W
Breakdown Voltage (Collector to Emitter)	80 V
Thermal Resistance	6.25℃/W (RθJC)
Continuous Collector Current	8A
hFE Min	40 @4A, 1V
Input Power (Max)	1.75 W
DC Current Gain (hFE)	60
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature	-55℃ ~ 150℃
Power Dissipation (Max)	1750 mW
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Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99

Product Description

The MJD45H11G is a 8A PNP bipolar Power Transistor designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.
Electrically similar to popular D44H/D45H series
Fast switching speeds
Complementary pairs simplifies designs
AEC-Q101 qualified and PPAP capable

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