MJD47T4 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD47T4
Manufacturer

ST Microelectronics
ChipWorker Part#

CW22874303
Category

BJT Transistor, BJT
Package

TO-252-3
Description

Trans GP BJT NPN 250V 1A 15000mW 3Pin(2+Tab) DPAK T/R
Documentation

Datasheet

MJD47T4 Global Supplier

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MJD47T4 Specifications

Attribute	Attribute Value

Part Number	MJD47T4
Manufacturer	ST Microelectronics
ChipWorker Part#	CW22874303
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	10 MHz
Voltage Rating (DC)	250 V
Current Rating	1.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	15 W
Breakdown Voltage (Collector to Emitter)	250 V
hFE Min	30 @300mA, 10V
hFE Max	150
Input Power (Max)	15 W
DC Current Gain (hFE)	150
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	15000 mW
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Size-Length	6.6 mm
Size-Width	6.2 mm
Size-Height	2.4 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

DESCRIPTION
The MJD47 is manufactured using Medium Voltage Epitaxial Planar technology,resulting in a rugged high performance cost-effective transistor.
■ STMicroelectronics PREFERRED SALESTYPE
■ HIGH VOLTAGE CAPABILITY
■ SURFACE-MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”)
■ ELECTRICALLY SIMILAR TO TIP47
APPLICATIONS
■ SWITCH MODE POWER SUPPLIES
■ AUDIO AMPLIFIERS
■ GENERAL PURPOSE SWITCHING AND AMPLIFIER

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- Surface testing

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