MJD50G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD50G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW16523096
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK NPN 400V 1A
Documentation

Datasheet

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MJD50G Specifications

Attribute	Attribute Value

Part Number	MJD50G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW16523096
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-252-3
Frequency	10 MHz
Voltage Rating (DC)	400 V
Current Rating	1.00 A
Number of Positions	4 Position
Polarity	NPN
Power Dissipation	1.56 W
Gain Bandwidth Product	10 MHz
Breakdown Voltage (Collector to Emitter)	400 V
Thermal Resistance	8.33℃/W (RθJC)
Continuous Collector Current	1A
hFE Min	30 @300mA, 10V
Input Power (Max)	1.56 W
DC Current Gain (hFE)	30
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1560 mW
	expand all
Size-Length	6.73 mm
Size-Width	6.22 mm
Size-Height	2.38 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJD50G is a 1A NPN high voltage bipolar Power Transistor designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications.
Electrically similar to popular TIP47 and TIP50
AEC-Q101 qualified and PPAP capable

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