MJD5731T4G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJD5731T4G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW20720457
Category

BJT Transistor, BJT
Package

TO-252-3
Description

DPAK PNP 350V 1A
Documentation

Datasheet

MJD5731T4G Global Supplier

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MJD5731T4G Specifications

Attribute	Attribute Value

Part Number	MJD5731T4G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW20720457
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-252-3
Frequency	10 MHz
Voltage Rating (DC)	-350 V
Current Rating	-1.00 A
Number of Positions	4 Position
Polarity	PNP, P-Channel
Power Dissipation	15 W
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	1A
hFE Min	30 @300mA, 10V
Input Power (Max)	1.56 W
DC Current Gain (hFE)	10
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1560 mW
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Thanks to ON Semiconductor, your circuit can handle high levels of voltage using the PNP MJD5731T4G general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1560 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V.

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