MJE13007G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE13007G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4215340
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB NPN 400V 8A
Documentation

Datasheet

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MJE13007G Specifications

Attribute	Attribute Value

Part Number	MJE13007G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4215340
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	14 MHz
Voltage Rating (DC)	400 V
Current Rating	8.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	80 W
Rise Time	1.5 µs
Breakdown Voltage (Collector to Emitter)	400 V
Thermal Resistance	1.56℃/W (RθJC)
Continuous Collector Current	8A
hFE Min	5 @5A, 5V
Input Power (Max)	80 W
DC Current Gain (hFE)	4
Fall Time	0.7 µs
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	80000 mW
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Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	15.75 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJE13007G is a Silicon NPN Bipolar Power Transistor designed for high voltage and high speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220V switch mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits.
SOA and switching applications
Collector-base voltage (Vcbo = 700V)
Emitter-base voltage (Vcbo = 9V)

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