MJE15028 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE15028
Manufacturer

ON Semiconductor
ChipWorker Part#

CW151916166
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TRANS NPN 120V 8A TO220AB
Documentation

Datasheet

MJE15028 Global Supplier

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MJE15028 Specifications

Attribute	Attribute Value

Part Number	MJE15028
Manufacturer	ON Semiconductor
ChipWorker Part#	CW151916166
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-220-3
Voltage Rating (DC)	120 V
Current Rating	8.00 A
Power Dissipation	50 W
Breakdown Voltage (Collector to Emitter)	120 V
hFE Min	20 @4A, 2V
Input Power (Max)	50 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
	expand all
Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	9.28 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Bulk
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS
MJE15028, MJE15030 (NPN)
MJE15029, MJE15031 (PNP)
These devices are designed for use as high−frequency drivers in audio amplifiers.
Features
•DC Current Gain Specified to 4.0 Amperes
hFE= 40 (Min) @ IC= 3.0 Adc
= 20 (Min) @ IC= 4.0 Adc
•Collector−Emitter Sustaining Voltage
VCEO(sus)= 120 Vdc (Min); MJE15028, MJE15029
= 150 Vdc (Min); MJE15030, MJE15031
•High Current Gain − Bandwidth Product
fT= 30 MHz (Min) @ IC= 500 mAdc
•TO−220AB Compact Package
•Pb−Free Packages are Available

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