MJE15031G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE15031G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW3055883
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 150V 8A
Documentation

Datasheet

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MJE15031G Specifications

Attribute	Attribute Value

Part Number	MJE15031G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW3055883
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	70 MHz
Voltage Rating (DC)	-150 V
Current Rating	-8.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	50 W
Gain Bandwidth Product	30 MHz
Breakdown Voltage (Collector to Emitter)	150 V
Thermal Resistance	2.5℃/W (RθJC)
Continuous Collector Current	8A
hFE Min	20 @4A, 2V
Input Power (Max)	50 W
DC Current Gain (hFE)	40
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	50000 mW
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Size-Length	10.28 mm
Size-Width	4.83 mm
Size-Height	9.28 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJE15031G is a PNP silicon bipolar Power Transistor, designed for use as a high-frequency driver in audio amplifiers. High current gain bandwidth.
Collector-emitter sustaining voltage of 150VDC
UL94V-0 Flammability rating

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