MJE15032 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE15032
Manufacturer

ON Semiconductor
ChipWorker Part#

CW77349168
Category

BJT Transistor, BJT
Description

Trans GP BJT NPN 250V 8A 3Pin(3+Tab) TO-220AB Rail
Documentation

Datasheet

MJE15032 Global Supplier

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MJE15032 Specifications

Attribute	Attribute Value

Part Number	MJE15032
Manufacturer	ON Semiconductor
ChipWorker Part#	CW77349168
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	250 V
Current Rating	8.00 A
Power Dissipation	50 W
Breakdown Voltage (Collector to Emitter)	250 V
hFE Min	10 @2A, 5V
Input Power (Max)	2 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	10.28 mm
Size-Width	4.82 mm
Size-Height	9.28 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99

Product Description

MJE15032 (NPN),
MJE15033 (PNP)
8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS
Designed for use as high−frequency drivers in audio amplifiers.
Features
•DC Current Gain Specified to 5.0 Amperes
hFE = 70 (Min) @ IC= 0.5 Adc
= 10 (Min) @ IC= 2.0 Adc
•Collector−Emitter Sustaining Voltage VCEO(sus) = 250 Vdc (Min) − MJE15032, MJE15033
•High Current Gain − Bandwidth Product
fT= 30 MHz (Min) @ IC= 500 mAdc
•TO−220AB Compact Package
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Machine Model C
Human Body Model 3B

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