MJE15035G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE15035G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4704675
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220AB PNP 350V 4A
Documentation

Datasheet

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MJE15035G Specifications

Attribute	Attribute Value

Part Number	MJE15035G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4704675
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	30 MHz
Voltage Rating (DC)	-350 V
Current Rating	-4.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	50 W
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	4A
hFE Min	10 @2A, 5V
Input Power (Max)	2 W
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Size-Length	10.28 mm
Size-Width	4.83 mm
Size-Height	9.28 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The Bipolar Power Transistor is designed for use as a high-frequency driver in audio amplifiers.
Features
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