MJE172 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE172
Manufacturer

ST Microelectronics
ChipWorker Part#

CW53344300
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans GP BJT PNP 80V 3A 12500mW 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

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MJE172 Specifications

Attribute	Attribute Value

Part Number	MJE172
Manufacturer	ST Microelectronics
ChipWorker Part#	CW53344300
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Frequency	50 MHz
Voltage Rating (DC)	-100 V
Current Rating	-3.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	12.5 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	50 @100mA, 1V
hFE Max	250
Input Power (Max)	12.5 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	12500 mW
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Size-Width	2.7 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
HK STC License	NLR

Product Description

Bipolar (BJT) Transistor PNP 80V 3A 50MHz 12.5W Through Hole SOT-32-3

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