MJE181 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE181
Manufacturer

ON Semiconductor
ChipWorker Part#

CW161718053
Category

BJT Transistor, BJT
Package

TO-225-3
Description

TO-225-3 NPN 60V 3A
Documentation

Datasheet

MJE181 Global Supplier

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MJE181 Specifications

Attribute	Attribute Value

Part Number	MJE181
Manufacturer	ON Semiconductor
ChipWorker Part#	CW161718053
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-225-3
Voltage Rating (DC)	60.0 V
Current Rating	3.00 A
Polarity	N-Channel
Power Dissipation	1.5 W
Gain Bandwidth Product	50 MHz
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	3A
hFE Min	50
hFE Max	250
Input Power (Max)	12.5 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
	expand all
Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Bulk
Minimum Packing Quantity	500
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead

Product Description

MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
3 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 40 − 60 − 80 VOLTS 12.5 WATTS
The MJE170/180 series is designed for low power audio amplifier and low current, high speed switching applications.
Features
•Collector−Emitter Sustaining Voltage −
VCEO(sus) = 40 Vdc − MJE170, MJE180
= 60 Vdc − MJE171, MJE181
= 80 Vdc − MJE172, MJE182
•DC Current Gain −
hFE = 30 (Min) @ IC= 0.5 Adc
= 12 (Min) @ IC= 1.5 Adc
•Current−Gain − Bandwidth Product − fT = 50 MHz (Min) @ IC= 100 mAdc
•Annular Construction for Low Leakages − ICBO = 100 nA (Max) @ Rated VCB
•Epoxy Meets UL 94 V−0 @ 0.125 in
•ESD Ratings: Machine Model, C Human Body Model, 3B
•Pb−Free Packages are Available

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- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- X-ray inspection
- XRF inspection
- Electrical testing
- Surface testing

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