MJE182 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE182
Manufacturer

ST Microelectronics
ChipWorker Part#

CW36211000
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans GP BJT NPN 80V 3A 12500mW 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

MJE182 Global Supplier

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MJE182 Specifications

Attribute	Attribute Value

Part Number	MJE182
Manufacturer	ST Microelectronics
ChipWorker Part#	CW36211000
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Frequency	50 MHz
Voltage Rating (DC)	100 V
Current Rating	3.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	12.5 W
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	50 @100mA, 1V
hFE Max	250
Input Power (Max)	12.5 W
DC Current Gain (hFE)	50
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	12500 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
HK STC License	NLR

Product Description

The MJE182 is a NPN Low Voltage Transistor manufactured using Epitaxial Planar technology, housed in a plastic package. It is designed for low power audio amplifiers and low current, high speed switching applications.
High speed switching

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