MJE200 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE200
Manufacturer

ON Semiconductor
ChipWorker Part#

CW151987200
Category

BJT Transistor, BJT
Package

TO-225-3
Description

TO-225-3 NPN 25V 5A
Documentation

Datasheet

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MJE200 Specifications

Attribute	Attribute Value

Part Number	MJE200
Manufacturer	ON Semiconductor
ChipWorker Part#	CW151987200
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-225-3
Voltage Rating (DC)	25.0 V
Current Rating	5.00 A
Polarity	N-Channel
Power Dissipation	1.50 W
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	5A
hFE Min	45 @2A, 1V
hFE Max	180
Input Power (Max)	15 W
	expand all
Product Lifecycle Status	Unknown
Packaging	Bulk
Minimum Packing Quantity	500
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Complementary Silicon Power Plastic Transistors
These devices are designed for low voltage, low-power, high-gain audio amplifier applications.
Features
• Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2.0 Adc
= 10 (Min) @ IC = 5.0 Adc
• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
• High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
• Pb-Free Packages are Available

expand all

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