MJE210 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE210
Manufacturer

ON Semiconductor
ChipWorker Part#

CW231241267
Category

BJT Transistor, BJT
Description

TO-225-3 PNP 25V 5A
Documentation

Datasheet

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MJE210 Specifications

Attribute	Attribute Value

Part Number	MJE210
Manufacturer	ON Semiconductor
ChipWorker Part#	CW231241267
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	-25.0 V
Current Rating	-5.00 A
Polarity	Dual P-Channel
Power Dissipation	15.0 W
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	5A
hFE Min	45 @2A, 1V
hFE Max	180
Input Power (Max)	15 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	15000 mW
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Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Bulk
Minimum Packing Quantity	500
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

Complementary Silicon Power Plastic Transistors
These devices are designed for low voltage, low-power, high-gain audio amplifier applications.
Features
• Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc
= 45 (Min) @ IC = 2.0 Adc
= 10 (Min) @ IC = 5.0 Adc
• Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc = 0.75 Vdc (Max) @ IC = 2.0 Adc
• High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB
• Pb-Free Packages are Available

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