MJE243 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE243
Manufacturer

ON Semiconductor
ChipWorker Part#

CW58828319
Category

BJT Transistor, BJT
Package

TO-225-3
Description

TO-225-3 NPN 100V 4A
Documentation

Datasheet

MJE243 Global Supplier

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MJE243 Specifications

Attribute	Attribute Value

Part Number	MJE243
Manufacturer	ON Semiconductor
ChipWorker Part#	CW58828319
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-225-3
Voltage Rating (DC)	100 V
Current Rating	4.00 A
Polarity	N-Channel
Power Dissipation	15 W
Gain Bandwidth Product	40 MHz
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	4A
hFE Min	40
hFE Max	180
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	15000 mW
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Material	Silicon
Product Lifecycle Status	Unknown
Packaging	Bulk
Minimum Packing Quantity	500
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
Features
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High Collector-Emitter Sustaining Voltage -
VCEO(sus) = 100 Vdc (Min) MJE243, MJE253
High DC Current Gain @ IC = 200 mAdc
hFE = 40-200
hFE = 40-120 - MJE243, MJE253
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
High Current Gain Bandwidth Product -
fT = 40 MHz (Min) @ IC = 100 mAdc
Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
Pb-Free Packages are Available

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