MJE253G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE253G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW364800
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225 PNP 100V 4A
Documentation

Datasheet

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MJE253G Specifications

Attribute	Attribute Value

Part Number	MJE253G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW364800
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Frequency	40 MHz
Voltage Rating (DC)	-100 V
Current Rating	-4.00 A
Halogen Free Status	Halogen Free
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	15 W
Breakdown Voltage (Collector to Emitter)	100 V
Thermal Resistance	8.34℃/W (RθJC)
Continuous Collector Current	4A
hFE Min	40 @200mA, 1V
hFE Max	180
Input Power (Max)	1.5 W
DC Current Gain (hFE)	40
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	15000 mW
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

Product Description

The MJE253G is a -100V Silicon PNP Complementary Plastic Power Transistor designed for low power audio amplifier as well as low current and high speed switching applications.
High collector-emitter sustaining voltage
High DC current gain
Low collector emitter saturation voltage
High current gain bandwidth
Annular construction for low leakages

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