MJE2955T - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE2955T
Manufacturer

ST Microelectronics
ChipWorker Part#

CW5905030
Category

BJT Transistor, BJT
Package

TO-220-3
Description

Trans GP BJT PNP 60V 10A 75000mW 3Pin(3+Tab) TO-220 Tube
Documentation

Datasheet

MJE2955T Global Supplier

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MJE2955T Specifications

Attribute	Attribute Value

Part Number	MJE2955T
Manufacturer	ST Microelectronics
ChipWorker Part#	CW5905030
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	2 MHz
Voltage Rating (DC)	-60.0 V
Current Rating	-10.0 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	75 W
Breakdown Voltage (Collector to Emitter)	60 V
hFE Min	20 @4A, 4V
hFE Max	70
Input Power (Max)	75 W
DC Current Gain (hFE)	20
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	75000 mW
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The MJE2955T is a -60V Silicon Epitaxial Base PNP Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Complementary to the MJE3055T
Well-controlled hFE parameter for increased reliability

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