MJE340G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE340G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW1007680
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225 NPN 300V 0.5A
Documentation

Datasheet

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MJE340G Specifications

Attribute	Attribute Value

Part Number	MJE340G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW1007680
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	300 V
Current Rating	500 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	20 W
Breakdown Voltage (Collector to Emitter)	300 V
Thermal Resistance	6.25℃/W (RθJC)
Continuous Collector Current	0.5A
hFE Min	30 @50mA, 10V
Input Power (Max)	20 W
DC Current Gain (hFE)	240
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Junction Temperature	-65℃ ~ 150℃
Power Dissipation (Max)	20000 mW
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJE340G is a 300V Silicon NPN Complementary Plastic Medium Power Transistor useful for high voltage general purpose applications. This transistor has thermo pad construction that provides high power dissipation rating for high reliability.
Suitable for transformerless, line operated equipment
Emitter-base voltage (Vcbo = 5V)

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