MJE350 - ST Microelectronics

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE350
Manufacturer

ST Microelectronics
ChipWorker Part#

CW867073
Category

BJT Transistor, BJT
Package

TO-126-3
Description

Trans GP BJT PNP 300V 0.5A 2800mW 3Pin(3+Tab) SOT-32 Tube
Documentation

Datasheet

MJE350 Global Supplier

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MJE350 Specifications

Attribute	Attribute Value

Part Number	MJE350
Manufacturer	ST Microelectronics
ChipWorker Part#	CW867073
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	-300 V
Current Rating	-500 mA
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	20.8 W
Breakdown Voltage (Collector to Emitter)	300 V
hFE Min	30 @50mA, 10V
Input Power (Max)	20.8 W
DC Current Gain (hFE)	240
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2800 mW
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Size-Length	7.8 mm
Size-Width	2.7 mm
Size-Height	10.8 mm
Material	Silicon
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The MJE350 is a -300V Silicon Planar PNP Complementary Power Transistor intended for use in medium power linear and switching applications. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Complementary to the MJE340
Well-controlled hFE parameter for increased reliability

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