MJE350G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJE350G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW6908466
Category

BJT Transistor, BJT
Package

TO-126-3
Description

TO-225 PNP 300V 0.5A
Documentation

Datasheet

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MJE350G Specifications

Attribute	Attribute Value

Part Number	MJE350G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW6908466
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-126-3
Voltage Rating (DC)	-300 V
Current Rating	-500 mA
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	20 W
Breakdown Voltage (Collector to Emitter)	300 V
Thermal Resistance	6.25℃/W (RθJC)
Continuous Collector Current	0.5A
hFE Min	30
Input Power (Max)	20 W
DC Current Gain (hFE)	240
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	20000 mW
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Size-Length	7.74 mm
Size-Width	2.66 mm
Size-Height	11.04 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The MJE350G is a 0.5A PNP bipolar Power Transistor designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.

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