MJF127G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJF127G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW11168404
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220FP PNP 100V 5A
Documentation

Datasheet

MJF127G Global Supplier

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MJF127G Specifications

Attribute	Attribute Value

Part Number	MJF127G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW11168404
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	-100 V
Current Rating	5.00 A
Number of Positions	3 Position
Polarity	PNP, P-Channel
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	100 V
Continuous Collector Current	5A
hFE Min	2000 @3A, 3V
Input Power (Max)	2 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2000 mW
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Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Complementary Power Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
Features
•Electrically Similar to the Popular TIP122 and TIP127
•100 VCEO(sus)
•5.0 A Rated Collector Current
•No Isolating Washers Required
•Reduced System Cost
•High DC Current Gain −2000 (Min) @ IC= 3 Adc
•UL Recognized, File #E69369, to 3500 VRMSIsolation
•Pb−Free Packages are Available

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