MJF18004G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJF18004G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW10705908
Category

BJT Transistor, BJT
Package

TO-220-3
Description

TO-220FP NPN 450V 5A
Documentation

Datasheet

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MJF18004G Specifications

Attribute	Attribute Value

Part Number	MJF18004G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW10705908
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Frequency	13 MHz
Voltage Rating (DC)	450 V
Current Rating	5.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	280 mW
Gain Bandwidth Product	13 MHz
Isolation Voltage	2.00 kV
Breakdown Voltage (Collector to Emitter)	450 V
Continuous Collector Current	5A
hFE Min	14 @300mA, 5V
Input Power (Max)	35 W
DC Current Gain (hFE)	32
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
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Size-Length	10.63 mm
Size-Width	4.9 mm
Size-Height	9.24 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS
For Switching Power Supply Applications
The MJE/MJF18004G have an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts.
Features
•Improved Efficiency Due to Low Base Drive Requirements:
♦High and Flat DC Current Gain hFE
♦Fast Switching
♦No Coil Required in Base Circuit for Turn−Off (No Current Tail)
•Full Characterization at 125C
•ON Semiconductor Six Sigma Philosophy Provides Tight and Reproducible Parametric Distributions
•Two Package Choices: Standard TO−220 or Isolated TO−220
•These Devices are Pb−Free and are RoHS Compliant

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