MJH11020 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJH11020
Manufacturer

ON Semiconductor
ChipWorker Part#

CW122172946
Category

BJT Transistor, BJT
Package

TO-218-3
Description

TO-247-3 NPN 200V 15A
Documentation

Datasheet

MJH11020 Global Supplier

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MJH11020 Specifications

Attribute	Attribute Value

Part Number	MJH11020
Manufacturer	ON Semiconductor
ChipWorker Part#	CW122172946
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-218-3
Voltage Rating (DC)	200 V
Current Rating	15.0 A
Polarity	N-Channel
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	200 V
Continuous Collector Current	15A
hFE Min	400 @10A, 5V
hFE Max	15000
Input Power (Max)	150 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
	expand all
Size-Length	15.2 mm
Size-Width	4.9 mm
Size-Height	12.2 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
Minimum Packing Quantity	30
RoHS	Non-Compliant
Lead-Free Status	Contains Lead

Product Description

Complementary Darlington Silicon Power Transistors
These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.
Features
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector−Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• Pb−Free Packages are Available

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