MJH11021 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJH11021
Manufacturer

ON Semiconductor
ChipWorker Part#

CW172328906
Category

BJT Transistor, BJT
Package

SOT-93-3
Description

TO-247 PNP 250V 15A
Documentation

Datasheet

MJH11021 Global Supplier

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MJH11021 Specifications

Attribute	Attribute Value

Part Number	MJH11021
Manufacturer	ON Semiconductor
ChipWorker Part#	CW172328906
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	SOT-93-3
Voltage Rating (DC)	-250 V
Current Rating	-15.0 A
Polarity	PNP
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	250 V
Continuous Collector Current	15A
hFE Min	400 @10A, 5V
hFE Max	15000
Input Power (Max)	150 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
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Size-Length	15.2 mm
Size-Width	4.9 mm
Size-Height	12.2 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
Minimum Packing Quantity	30
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Complementary Darlington Silicon Power Transistors
These devices are designed for use as general purpose amplifiers, low frequency switching and motor control applications.
Features
• High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector−Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) — MJH11018, 17
= 200 Vdc (Min) — MJH11020, 19
= 250 Vdc (Min) — MJH11022, 21
• Low Collector−Emitter Saturation Voltage
VCE(sat) = 1.2 V (Typ) @ IC = 5.0 A
= 1.8 V (Typ) @ IC = 10 A
• Monolithic Construction
• Pb−Free Packages are Available

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