MJH11022G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJH11022G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW5689210
Category

BJT Transistor, BJT
Package

TO-247-3
Description

TO-247 NPN 250V 15A
Documentation

Datasheet

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MJH11022G Specifications

Attribute	Attribute Value

Part Number	MJH11022G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW5689210
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	250 V
Current Rating	15.0 A
Output Voltage	250 V
Output Current	15 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	150 W
Breakdown Voltage (Collector to Emitter)	250 V
Continuous Collector Current	15A
hFE Min	400 @10A, 5V
hFE Max	15000
Input Power (Max)	150 W
DC Current Gain (hFE)	15
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	150 W
Input Voltage	5 V
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Size-Length	16.26 mm
Size-Width	4.9 mm
Size-Height	21.08 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJH11022G is a 250V NPN Darlington Bipolar Power Transistor designed for use as general purpose amplifiers, low frequency switching and motor control applications. The MJH11021 (PNP) and MJH11022 (NPN) are complementary devices.
High DC current gain
250VDC Minimum collector-emitter sustaining voltage (VCEO(sus))
Low collector-emitter saturation voltage (VCE (sat))
Monolithic construction
250VDC Collector to base voltage (VCBO)
5V Emitter to base voltage (VEBO)
30ADC Peak collector current
0.5A DC Base current (IB)
0.83°C/W Thermal resistance, junction to case

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