MJL21194 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJL21194
Manufacturer

ON Semiconductor
ChipWorker Part#

CW59301126
Category

BJT Transistor, BJT
Package

TO-264-3
Description

TO-3BPL NPN 250V 16A
Documentation

Datasheet

MJL21194 Global Supplier

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MJL21194 Specifications

Attribute	Attribute Value

Part Number	MJL21194
Manufacturer	ON Semiconductor
ChipWorker Part#	CW59301126
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Voltage Rating (DC)	250 V
Current Rating	16.0 A
Polarity	NPN
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	250 V
Continuous Collector Current	16A
hFE Min	25 @8A, 5V
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	20.3 mm
Size-Width	5.3 mm
Size-Height	26.4 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

Silicon Power Transistors
The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
Features
•Total Harmonic Distortion Characterized
•High DC Current Gain − hFE= 25 Min @ IC = 8 Adc
•Excellent Gain Linearity
•High SOA: 2.25 A, 80 V, 1 Second
•Pb−Free Packages are Available

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