MJL21196 - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJL21196
Manufacturer

ON Semiconductor
ChipWorker Part#

CW135429063
Category

BJT Transistor, BJT
Package

TO-264-3
Description

TO-3BPL NPN 250V 16A
Documentation

Datasheet

MJL21196 Global Supplier

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MJL21196 Specifications

Attribute	Attribute Value

Part Number	MJL21196
Manufacturer	ON Semiconductor
ChipWorker Part#	CW135429063
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Case/Package	TO-264-3
Voltage Rating (DC)	250 V
Current Rating	16.0 A
Polarity	NPN
Breakdown Voltage (Collector to Emitter)	250 V
Continuous Collector Current	16A
hFE Min	25 @8A, 5V
Input Power (Max)	200 W
	expand all
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
ECCN Code	EAR99

Product Description

16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.
•Total Harmonic Distortion Characterized
•High DC Current Gain −hFE= 25 Min @ IC= 8 Adc
•Excellent Gain Linearity
•High SOA: 2.50 A, 80 V, 1 Second
•Epoxy Meets UL 94, V−0 @ 0.125 in
•ESD Ratings: Human Body Model, 3B 8000 V
Machine Model, C 400 V
•Pb−Free Packages are Available

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- Vacuum packed
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- Anti-vibration foam
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- Surface testing

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