MJW21195G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MJW21195G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW10399132
Category

BJT Transistor, BJT
Package

TO-247-3
Description

TO-247 PNP 250V 16A
Documentation

Datasheet

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MJW21195G Specifications

Attribute	Attribute Value

Part Number	MJW21195G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW10399132
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Frequency	4 MHz
Voltage Rating (DC)	-250 V
Current Rating	-16.0 A
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	250 V
Continuous Collector Current	16A
hFE Min	20 @8A, 5V
hFE Max	80
Input Power (Max)	200 W
DC Current Gain (hFE)	20
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	16.26 mm
Size-Width	5.3 mm
Size-Height	21.08 mm
Material	Silicon
Operating Temperature	-65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MJW21195G is a -250V Silicon PNP Bipolar Power Transistor that utilizes perforated emitter technology and is specifically designed for high power audio output, disk head positioners and linear applications.
Total harmonic distortion characterized
High DC current gain
Excellent gain linearity
High SOA

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