MMBF170LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBF170LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW111896
Category

MOSFET, MOSFET Transistor
Package

SOT-23-3
Description

MOSFET; Power; N-Ch; VDSS 60VDC; RDS(ON) 5Ω; ID 0.5A; SOT-23 (TO-236); PD 225mW
Documentation

Datasheet

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MMBF170LT1G Specifications

Attribute	Attribute Value

Part Number	MMBF170LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW111896
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	60.0 V
Current Rating	500 mA
Power Rating	0.225 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	5 Ω
Polarity	N-Channel
Power Dissipation	225 mW
Threshold Voltage	3 V
Input Capacitance	60 pF
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	500 mA
Input Capacitance (Ciss)	60pF @10V(Vds)
Input Power (Max)	225 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	225mW (Ta)
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Size-Length	3.04 mm
Size-Width	1.3 mm
Size-Height	0.94 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

The MMBF170LT1G is a N-channel Power MOSFET with drain source voltage at 60VDC and drain current at 500mA.
AEC-Q101 Qualified
PPAP capable

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