MMBF2201NT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBF2201NT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW15612525
Category

MOSFET, MOSFET Transistor
Package

SC-70-3
Description

SC-70 N-CH 20V 0.3A
Documentation

Datasheet

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MMBF2201NT1G Specifications

Attribute	Attribute Value

Part Number	MMBF2201NT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW15612525
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SC-70-3
Voltage Rating (DC)	20.0 V
Current Rating	300 mA
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	1 Ω
Polarity	N-Channel
Power Dissipation	150 mW
Threshold Voltage	1.7 V
Input Capacitance	45.0 pF
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	300 mA
Rise Time	2.5 ns
Input Capacitance (Ciss)	45pF @5V(Vds)
Input Power (Max)	150 mW
Fall Time	0.8 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150mW (Ta)
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Size-Length	2.1 mm
Size-Width	1.24 mm
Size-Height	0.85 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MMBF2201NT1G is a N-channel miniature surface-mount Power MOSFET with low RDS (ON) assure minimal power loss and conserve energy. The device is ideal for use in space sensitive power management circuitry. It is suitable for DC-to-DC converters, power management in portable and battery-powered products such as printers, PCMCIA cards, cellular and cordless telephones.
Low RDS (ON) provides higher efficiency and extends battery life
Miniature surface-mount package saves board space
-55 to 150°C Operating temperature range

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