MMBT2222AWT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBT2222AWT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW103159
Category

BJT Transistor, BJT
Package

SC-70-3
Description

SC-70 NPN 40V 0.6A
Documentation

Datasheet

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MMBT2222AWT1G Specifications

Attribute	Attribute Value

Part Number	MMBT2222AWT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW103159
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SC-70-3
Frequency	300 MHz
Voltage Rating (DC)	40.0 V
Current Rating	28.0 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	150 mW
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	0.6A
hFE Min	100 @150mA, 10V
Input Power (Max)	150 mW
DC Current Gain (hFE)	300
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 mW
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

Product Description

The MMBT2222AWT1G is a NPN Bipolar Transistor designed for general purpose amplifier applications. It is housed in the package which is designed for low power surface-mount applications.
Low RDS (ON) provides higher efficiency and extends battery life
Package saves board space
AEC-Q101 qualified and PPAP capable

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