MMBT4401LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBT4401LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW14330
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 40V 0.6A
Documentation

Datasheet

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MMBT4401LT1G Specifications

Attribute	Attribute Value

Part Number	MMBT4401LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW14330
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	250 MHz
Voltage Rating (DC)	40.0 V
Current Rating	600 mA
Power Rating	300 mW
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	0.6A
hFE Min	20
Input Power (Max)	300 mW
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	0.94 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2014/12/17
ECCN Code	EAR99

Product Description

The MMBT4401LT1G is a 40V NPN silicon Bipolar Transistor designed for use in linear and switching applications. The device is suitable for lower power surface mount applications.
Halogen-free/BFR-free
AEC-Q101 qualified and PPAP capable
60VDC Collector to base voltage (VCBO)
6VDC Emitter to base voltage (VEBO)
900mADC Peak collector current
556°C/W Thermal resistance, junction to ambient

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