MMBT4401WT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBT4401WT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW11072504
Category

BJT Transistor, BJT
Package

SC-70-3
Description

SC-70 NPN 40V 0.6A
Documentation

Datasheet

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MMBT4401WT1G Specifications

Attribute	Attribute Value

Part Number	MMBT4401WT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW11072504
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SC-70-3
Frequency	250 MHz
Voltage Rating (DC)	40.0 V
Current Rating	600 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	150 mW
Breakdown Voltage (Collector to Emitter)	40 V
Continuous Collector Current	0.6A
hFE Min	100 @150mA, 1V
Input Power (Max)	150 mW
DC Current Gain (hFE)	20
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150 mW
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Size-Width	1.24 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The three terminals of this NPN MMBT4401WT1G GP BJT from ON Semiconductor give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 150 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

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