MMBT5551LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBT5551LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW19500
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 160V 0.6A
Documentation

Datasheet

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MMBT5551LT1G Specifications

Attribute	Attribute Value

Part Number	MMBT5551LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW19500
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Voltage Rating (DC)	160 V
Current Rating	600 mA
Power Rating	0.225 W
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	160 V
Continuous Collector Current	0.6A
hFE Min	80 @10mA, 5V
hFE Max	250
Input Power (Max)	225 mW
DC Current Gain (hFE)	80
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	2.9 mm
Size-Width	1.3 mm
Size-Height	0.94 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

The MMBT5551LT1G is an NPN Silicon High Voltage Transistor designed for requiring unique site and control change requirements. This transistor is PPAP capable and AEC-Q101 qualified.
Halogen-free

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