MMBT6517LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBT6517LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW76076571
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 350V 0.1A
Documentation

Datasheet

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MMBT6517LT1G Specifications

Attribute	Attribute Value

Part Number	MMBT6517LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW76076571
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	200 MHz
Voltage Rating (DC)	350 V
Current Rating	500 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	0.1A
hFE Min	20 @50mA, 10V
Input Power (Max)	225 mW
DC Current Gain (hFE)	15
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	225 mW
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Size-Length	3.04 mm
Size-Width	1.3 mm
Size-Height	1.11 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

The MMBT6517LT1G is a NPN high voltage Bipolar Transistor designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface-mount applications.
Low RDS (ON) provides higher efficiency and extends battery life
Saves board space

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