MMBT8099LT1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBT8099LT1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4011477
Category

BJT Transistor, BJT
Package

SOT-23-3
Description

SOT-23 NPN 80V 0.5A
Documentation

Datasheet

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MMBT8099LT1G Specifications

Attribute	Attribute Value

Part Number	MMBT8099LT1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4011477
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Frequency	150 MHz
Voltage Rating (DC)	80.0 V
Current Rating	500 mA
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	225 mW
Breakdown Voltage (Collector to Emitter)	80 V
Continuous Collector Current	0.5A
hFE Min	100 @1mA, 5V
hFE Max	300
Input Power (Max)	225 mW
DC Current Gain (hFE)	150
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 mW
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Size-Length	3.04 mm
Size-Width	1.4 mm
Size-Height	1.01 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

**Small Signal NPN Transistors, ON Semiconductor**
These ON Semiconductor Bipolar transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.

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