MMBZ33VAL - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMBZ33VAL
Manufacturer

NXP
ChipWorker Part#

CW107123234
Category

TVS Diode
Package

TO-236
Description

NXP MMBZ33VAL ESD Protection Device, TVS, 46V, TO-236AB, 3Pins, 900mV, 360mW
Documentation

Datasheet

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MMBZ33VAL Specifications

Attribute	Attribute Value

Part Number	MMBZ33VAL
Manufacturer	NXP
ChipWorker Part#	CW107123234
Category	TVS Diode
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-236
Operating Voltage	900 mV
Number of Positions	3 Position
Power Dissipation	360 mW
Clamping Voltage	46 V
Test Current	1 mA
Max Breakdown Voltage	34.65 V
Peak Pulse Power	40 W
Min Breakdown Voltage	31.35 V
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
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Size-Length	3 mm
Size-Width	1.4 mm
Size-Height	1.1 mm
Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

Product Description

The MMBZ33VAL is a low capacitance unidirectional double ESD Protection Diode in a common anode configuration. The device is designed for ESD and transient overvoltage protection of up to two signal lines.
Unidirectional ESD protection of two lines
ESD protection up to 30kV (contact discharge)
Bidirectional ESD protection of one line
IEC 61000-4-2, level 4 (ESD)
* 40W Rated peak pulse power PPPM
5nA Ultra low leakage current IRM

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