MMSF3P02HDR2G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMSF3P02HDR2G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW14040050
Category

MOSFET, MOSFET Transistor
Package

SOIC-8
Description

SOIC P-CH 20V 5.6A
Documentation

Datasheet

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MMSF3P02HDR2G Specifications

Attribute	Attribute Value

Part Number	MMSF3P02HDR2G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW14040050
Category	MOSFET, MOSFET Transistor
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Voltage Rating (DC)	-20.0 V
Current Rating	-3.00 A
Drain to Source Resistance (on) (Rds)	0.06 Ω
Polarity	P-Channel
Power Dissipation	2.5 W
Threshold Voltage	1.5 V
Input Capacitance	1.40 nF
Gate Charge	46.0 nC
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	20.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	5.60 A
Rise Time	135 ns
Input Capacitance (Ciss)	1400pF @16V(Vds)
Input Power (Max)	2.5 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Increase the current or voltage in your circuit with this MMSF3P02HDR2G power MOSFET from ON Semiconductor. Its maximum power dissipation is 2500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This P channel MOSFET transistor operates in enhancement mode.

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