MMZ38333BT1 - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MMZ38333BT1
Manufacturer

NXP
ChipWorker Part#

CW432293067
RoHS

Lead free / RoHS Compliant
Description

InGaP HBT Linear Amplifier, 3400-3800MHz, 37dB, 32 dBm.
Documentation

Datasheet

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MMZ38333BT1 Specifications

Attribute	Attribute Value

Part Number	MMZ38333BT1
Manufacturer	NXP
ChipWorker Part#	CW432293067
Documentation	Datasheet
Number of Pins	24 Pin
Case/Package	VFQFN-24
Frequency	3.4GHz ~ 3.8GHz
Test Frequency	3.6 GHz
Operating Temperature (Max)	175 ℃
Supply Voltage	5 V
	expand all
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

Overview
The MMZ38333B is a 3-stage high linearity InGaP HBT broadband amplifier designed for small cells and LTE base stations. It provides exceptional linearity for LTE air interface with an ACPR of -48 dBc at an output power greater than 22.3 dBm, covering frequencies from 3400 to 3800 MHz. It operates off a 5 V supply voltage. The amplifier is internally pre-matched with the flexibility to change external matching to suit the final application and offers state-of-the-art reliability, ruggedness, temperature stability and ESD performance.
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## Features
* Frequency: 3400-3800 MHz
* P1dB: 31.7 dBm @ 3600 MHz
* Power gain: 37 dB @ 3600 MHz
* Active bias control (adjustable externally)
* Power down control via VBIAS
* 5 volt supply
* Cost-effective 24-pin, 4 mm QFN surface mount plastic package
* RoHS compliant
## Features RF Performance Table
### Typical Performance
VCC1 = VCC2 = VCC3 = VBIAS = 5 Vdc*Frequency** | **Pout
(dBm)* | **Gps
(dB)* | **ACPR
(dBc)* | **ICC
(mA)* | **Test Signal**
\---|---|---|---|---|---
3500(1) MHz| 22.3| 38.2| –48.0| 482| LTE 20 MHz
3500(2) MHz| 17.4| 36.7| –48.0| 242
3500(3) MHz| 22.6| 38.3| –48.0| 460
3700(1) MHz| 21.6| 38.0| –48.0| 470
3700(2) MHz| 18.2| 37.0| –48.0| 260
3700(3) MHz| 22.8| 37.7| –48.0| 495
1\\. High bias, high linearity. 2. Low bias, high linearity. 3. High power.

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