MPSA06RA - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MPSA06RA
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4005907
Category

BJT Transistor, BJT
Package

TO-226-3
Description

Trans GP BJT NPN 80V 0.5A 3Pin TO-92 T/R
Documentation

Datasheet

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MPSA06RA Specifications

Attribute	Attribute Value

Part Number	MPSA06RA
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4005907
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-226-3
Frequency	100 MHz
Number of Positions	3 Position
Power Dissipation	625 mW
Breakdown Voltage (Collector to Emitter)	80 V
hFE Min	100 @100mA, 1V
Input Power (Max)	625 mW
DC Current Gain (hFE)	100
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	625 mW
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Size-Length	5.2 mm
Size-Width	4.19 mm
Size-Height	5.33 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

The MPSA06RA is a NPN Bipolar Transistor designed for general purpose amplifier applications at collector currents to 300mA.
-55 to 150°C Junction temperature range

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