MPSH10G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MPSH10G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW98532324
Category

BJT Transistor, BJT
Package

TO-92-3
Description

Trans RF BJT NPN 25V 350000mW 3Pin TO-92 Box
Documentation

Datasheet

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MPSH10G Specifications

Attribute	Attribute Value

Part Number	MPSH10G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW98532324
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-92-3
Frequency	650 MHz
Voltage Rating (DC)	25.0 V
Current Rating	4.00 mA
Polarity	NPN
Power Dissipation	350 W
Gain Bandwidth Product	650 MHz
Breakdown Voltage (Collector to Emitter)	25 V
Thermal Resistance	125℃/W (RθJC)
hFE Min	60 @4mA, 10V
Input Power (Max)	350 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	350000 mW
	expand all
Size-Length	5.2 mm
Size-Width	4.19 mm
Size-Height	5.33 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Unknown
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

Product Description

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