MPSW45AG - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MPSW45AG
Manufacturer

ON Semiconductor
ChipWorker Part#

CW92809646
Category

BJT Transistor, BJT
Package

TO-226-3
Description

TO-92 NPN 50V 1A
Documentation

Datasheet

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MPSW45AG Specifications

Attribute	Attribute Value

Part Number	MPSW45AG
Manufacturer	ON Semiconductor
ChipWorker Part#	CW92809646
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-226-3
Voltage Rating (DC)	50.0 V
Current Rating	1.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	2.5 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	1A
hFE Min	25000 @200mA, 5V
Input Power (Max)	1 W
DC Current Gain (hFE)	25000
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	100MHz (Min)
Power Dissipation (Max)	1000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Box
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Compared to other transistors, the NPN MPSW45AG Darlington transistor from ON Semiconductor can provide you with a higher current gain value. This Darlington transistor array"s maximum emitter base voltage is 12 V, while its maximum base emitter saturation voltage is 2@2mA@1A V. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 25000@200mA@5 V|15000@500mA@5V|4000@1A@5V. It has a maximum collector emitter saturation voltage of 1.5@2mA@1A V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 12 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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