MRF1K50GNR5 - NXP

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MRF1K50GNR5
Manufacturer

NXP
ChipWorker Part#

CW69071073
Category

BJT Transistor, BJT
Package

OM-1230G-4L
Description

RF Power Transistor,1.8 to 500MHz, 1500W, Typ Gain in dB is 23.4 @ 230MHz, 50V, LDMOS, SOT1824
Documentation

Datasheet

MRF1K50GNR5 Global Supplier

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MRF1K50GNR5 Specifications

Attribute	Attribute Value

Part Number	MRF1K50GNR5
Manufacturer	NXP
ChipWorker Part#	CW69071073
Category	BJT Transistor, BJT
Documentation	Datasheet
Number of Pins	4 Pin
Case/Package	OM-1230G-4L
Frequency	1.8MHz ~ 500MHz
Power Dissipation	2941000 mW
Output Power	1500 W
Gain	23 dB
Input Capacitance (Ciss)	683pF @50V(Vds)
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	2941000 mW
Voltage Rating	50 V
Supply Voltage	50 V
	expand all
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status
ECCN Code	EAR99

Product Description

Overview
These high ruggedness devices, MRF1K50N and MRF1K50GN, are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.
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## Features
* High drain-source avalanche energy absorption capability
* Unmatched input and output allowing wide frequency range utilization
* Device can be used single-ended or in a push-pull configuration
* Characterized from 30 to 50 V for ease of use
* Suitable for linear application
* Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
* RoHS compliant
* Recommended driver: MRFE6VS25N (25 W)
**Popular Applications**
* Industrial, Scientific, Medical (ISM)
* Laser generation
* Plasma etching
* Particle accelerators
* MRI, diathermy, skin laser and ablation
* Industrial heating, welding and drying systems
* Broadcast
* Radio broadcast
* VHF TV broadcast
* Aerospace
* VHF omnidirectional range (VOR)
* HF and VHF communications
* Weather radar
* Mobile Radio
* VHF and UHF base stations
## Features RF Performance Tables
### Typical Performance
VDD = 50 Vdc*Frequency
(MHz)* | **Signal Type** | **Pout
(W)* | **Gps
(dB)* | **ηD
(%)*
\---|---|---|---|---
87.5-108(1,2)| CW| 1421 CW| 23.1| 83.2
230(3,4)| Pulse
(100 µsec, 20% Duty Cycle)| 1500 Peak| 23.4| 75.1
### Load Mismatch/Ruggedness
**Frequency
(MHz)* | **Signal Type** | **VSWR** | **Pin
(W)* | **Test
Voltage* | **Result**
\---|---|---|---|---|---
230(3) | Pulse
(100 µsec, 20% Duty Cycle) | > 65:1 at all Phase Angles | 15 Peak
(3 dB Overdrive) | 50 | No Device Degradation
1\\. Data from 87.5-108 MHz wideband reference circuit.
2\\. The values shown are the center band performance numbers across the indicated frequency range.
3\\. Data from 230 MHz narrowband production test fixture.
4\\. All data measured in fixture with device soldered to heatsink.

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
- Anti-static packaging
- Anti-vibration foam
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- Surface testing

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