MS1001 - Microsemi

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MS1001
Manufacturer

Microsemi
ChipWorker Part#

CW299646400
Category

BJT Transistor, BJT
Package

M-174
Description

RF Power Bipolar Transistor, 1Element, High Frequency Band, Silicon, NPN, 0.5INCH, PLASTIC, M174, 4Pin
Documentation

Datasheet

MS1001 Global Supplier

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MS1001 Specifications

Attribute	Attribute Value

Part Number	MS1001
Manufacturer	Microsemi
ChipWorker Part#	CW299646400
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	M-174
Power Dissipation	270000 mW
Breakdown Voltage (Collector to Emitter)	18 V
Gain	13 dB
hFE Min	20 @5A, 5V
Input Power (Max)	270 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	270000 mW
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Size-Height	7.11 mm
Operating Temperature	200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

Product Description

RF Transistor NPN 18V 20A 30MHz 270W Chassis Mount M174

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- Carefully tested and packaged by ChipWorker
- Vacuum packed
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- Anti-vibration foam
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