MUN5113DW1T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MUN5113DW1T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW8507300
Category

BJT Transistor, BJT
Package

SC-70-6
Description

SC-88 PNP 50V 100mA
Documentation

Datasheet

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MUN5113DW1T1G Specifications

Attribute	Attribute Value

Part Number	MUN5113DW1T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW8507300
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Voltage Rating (DC)	-50.0 V
Current Rating	-100 mA
Halogen Free Status	Halogen Free
Polarity	PNP
Power Dissipation	250 mW
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	80 @5mA, 10V
Input Power (Max)	250 mW
DC Current Gain (hFE)	80
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	385 mW
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Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single
device. In the MUN5111DW1T1 series,two BRT devices are housed in the SOT−363 package which is ideal for low−power surface mount applications where board space is at a premium.
Features
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•Pb−Free Packages are Available

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