MUN5235DW1T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MUN5235DW1T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW4824433
Category

BJT Transistor, BJT
Package

SC-70-6
Description

SC-88 NPN 50V 100mA
Documentation

Datasheet

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MUN5235DW1T1G Specifications

Attribute	Attribute Value

Part Number	MUN5235DW1T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW4824433
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Voltage Rating (DC)	50.0 V
Current Rating	100 mA
Polarity	NPN
Power Dissipation	0.385 W
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	80 @5mA, 10V
hFE Max	80 @5mA, 10V
Input Power (Max)	250 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	256 mW
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	0.9 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

Product Description

Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1G series, two BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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