MUN5313DW1T1G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

MUN5313DW1T1G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW7519593
Category

BJT Transistor, BJT
Package

SC-70-6
Description

SOT-363 NPN+PNP 50V 100mA
Documentation

Datasheet

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MUN5313DW1T1G Specifications

Attribute	Attribute Value

Part Number	MUN5313DW1T1G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW7519593
Category	BJT Transistor, BJT
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Voltage Rating (DC)	50.0 V
Current Rating	100 mA
Polarity	NPN, PNP
Power Dissipation	256 mW
Breakdown Voltage (Collector to Emitter)	50 V
Continuous Collector Current	100mA
hFE Min	80
hFE Max	80
Input Power (Max)	250 mW
DC Current Gain (hFE)	140
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	385 mW
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Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	0.9 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

ON Semiconductor"s npn and PNP MUN5313DW1T1G digital transistor is the ideal component to use in situations where digital signal processing is required. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 385 mW. It has a maximum collector emitter voltage of 50 V. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a dual configuration.

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