NCP5181DR2G - ON Semiconductor

The pictures are for reference only, and the specific specifications can be found in the product manual.

Part No

NCP5181DR2G
Manufacturer

ON Semiconductor
ChipWorker Part#

CW14356759
Category

FET Driver
Package

SOIC-8
Description

MOSFET DRVR 2.2A 2Out Hi/Lo Side Full Brdg/Half Brdg Non-Inv 8Pin SOIC N T/R
Documentation

Datasheet

NCP5181DR2G Global Supplier

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NCP5181DR2G Specifications

Attribute	Attribute Value

Part Number	NCP5181DR2G
Manufacturer	ON Semiconductor
ChipWorker Part#	CW14356759
Category	FET Driver
Documentation	Datasheet
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Supply Voltage (DC)	10.0V (min)
Rise/Fall Time	40ns, 20ns
Halogen Free Status	Halogen Free
Number of Outputs	2 Output
Output Voltage	620.3 V
Output Current	2.20 A
Number of Positions	8 Position
Power Dissipation	178 mW
Rise Time	60 ns
Fall Time	40 ns
Fall Time (Max)	40 ns
Fall Time (Max)	60 ns
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	178 mW
Supply Voltage	10V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	10 V
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99
HK STC License	NLR

Product Description

Ideal for high voltage transistors this NCP5181DR2G power driver manufactured by ON Semiconductor will help switch junction. This device has a maximum propagation delay time of 170 ns and a maximum power dissipation of 178 mW. Its maximum power dissipation is 178 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device has a minimum operating supply voltage of 10 V and a maximum of 20 V. This gate driver has an operating temperature range of -55 °C to 150 °C.

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